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Patent No. US 11271097
Issue Date Mar 8, 2022
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Patent 11271097 - Cap oxidation for FinFET formation > Summary

US Patent

Patent No. US 11271097

Published on Mar 8, 2022

Application No. 17/080519

Filed on Oct 26, 2020

Priority Date -

Inventor/Applicants

7

Hung, Steven C. - Sunnyvale, CA US

Colombeau, Benjamin - San Jose, CA US

Dube, Abhishek - Fremont, CA US

Kung, Sheng-Chin - Milpitas, CA US

Liu, Patricia M. - Saratoga, CA US

Bevan, Malcolm J. - Santa Clara, CA US

Swenberg, Johanes - Los Gatos, CA US

Classification

International:3

H01L 29/66

H01L 29/786;

H01L 21/02;

Examiner

Gheyas, Syed I

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