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Patexia Research
Patent No. US 11271097
Issue Date Mar 8, 2022
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Patent 11271097 - Cap oxidation for FinFET formation > Claims

  • 1. A method of forming a semiconductor structure, the method comprising: forming a silicon layer over a semiconductor substrate, wherein the semiconductor substrate comprises silicon germanium;oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate;removing the sacrificial oxide;oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material; andforming a high-k dielectric material overlying the oxygen-containing material.
    • 2. The method of forming a semiconductor structure of claim 1, wherein the removing includes an in-situ dry chemical process.
      • 3. The method of forming a semiconductor structure of claim 2, wherein the removing is performed in a first processing chamber, and wherein the method further comprises transferring the semiconductor substrate from the first processing chamber to a second processing chamber prior to forming the high-k dielectric material.
    • 4. The method of forming a semiconductor structure of claim 1, wherein the method is performed in one or more processing chambers without exposing the semiconductor substrate to atmosphere.
    • 5. The method of forming a semiconductor structure of claim 1, wherein the silicon layer is formed epitaxially over the silicon germanium.
    • 6. The method of forming a semiconductor structure of claim 1, wherein forming the sacrificial oxide comprises a first oxidation process, and wherein oxidizing the portion of the silicon layer in contact with the semiconductor substrate comprises a second oxidation process different from the first oxidation process.
    • 7. The method of forming a semiconductor structure of claim 1, wherein the oxidizing the portion of the silicon layer in contact with the semiconductor substrate comprises delivering a nitrogen-and-oxygen containing precursor to the semiconductor substrate.
      • 8. The method of forming a semiconductor structure of claim 7, wherein the oxidizing the portion of the silicon layer in contact with the semiconductor substrate occurs at a temperature of less than or about 750° C.
    • 9. The method of forming a semiconductor structure of claim 1, further comprising, prior to forming the high-k dielectric material, introducing reactive ligands on the oxygen-containing material with a nitrogen-containing precursor or an oxygen-containing precursor.
      • 10. The method of forming a semiconductor structure of claim 9, wherein the nitrogen-containing precursor comprises ammonia.
    • 11. The method of forming a semiconductor structure of claim 1, wherein the high-k dielectric material comprises at least one element selected from the group consisting of hafnium, zirconium, silicon, lanthanum, aluminum, titanium, and strontium.
  • 12. A method of forming a semiconductor structure, the method comprising: removing oxide from a surface of a substrate contained in a semiconductor processing chamber, wherein the substrate comprises a silicon germanium fin;forming a silicon layer over the surface of the substrate;oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the substrate;removing the sacrificial oxide;delivering nitrous oxide to the substrate to form an oxygen-containing material;pre-treating the oxygen-containing material by contacting the substrate with a nitrogen-containing precursor; andforming a high-k dielectric material overlying the pre-treated oxygen-containing material.
    • 13. The method of forming a semiconductor structure of claim 12, wherein the removing includes an in-situ dry chemical process.
      • 14. The method of forming a semiconductor structure of claim 13, wherein the removing is performed in a first processing chamber, and wherein the method further comprises transferring the substrate from the first processing chamber to a second processing chamber prior to forming the high-k dielectric material.
    • 15. The method of forming a semiconductor structure of claim 12, wherein forming the sacrificial oxide comprises delivering nitrous oxide to the substrate to form an oxygen-containing material.
    • 16. The method of forming a semiconductor structure of claim 12, wherein forming the sacrificial oxide comprises delivering an oxygen-containing precursor and a hydrogen-containing precursor to the substrate to form an oxygen-containing material.
    • 17. The method of forming a semiconductor structure of claim 12, wherein delivering nitrous oxide to the substrate to form an oxygen-containing material occurs at a temperature of less than or about 750° C.
    • 18. The method of forming a semiconductor structure of claim 12, wherein pre-treating the oxygen-containing material forms reactive ligands on the oxygen-containing material.
    • 19. The method of forming a semiconductor structure of claim 12, further comprising post-treating the high-k dielectric material.
  • 20. A method of forming a semiconductor structure, the method comprising: removing a native oxide from a surface of a substrate contained in a semiconductor processing chamber, wherein the substrate comprises silicon germanium;forming a silicon layer over the surface of the substrate;oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the substrate;removing the sacrificial oxide;oxidizing the portion of the silicon layer in contact with the substrate to form an oxygen-containing material; andforming a high-k dielectric material overlying the oxygen-containing material.
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