Method for forming a field effect transistor having a high-k gate dielectric and related structure | Patent Application Number 10618273

10618273
Not Appealed
Patent NumberUS 06797572 B1
Publication Number-
Filled DateJul 11, 2003
Priority DateJul 11, 2003
Inventor/ApplicantsJoong S Jeon
Huicai Zhong
ExaminesTHAI, DAVIS
Art Unit2827
Technology Center2800
Assignments
Innovative Foundry Technologies Llc
Current
Advanced Micro Devices Inc
Original
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