Semiconductor devices utilizing differently composed metal-based in-laid gate electrodes | Patent Number 06583012
US 06583012 B1Filled DateFeb 13, 2001
Priority DateFeb 13, 2001
Publication Date-
Expiration DateFeb 13, 2021
Inventor/ApplicantsPaul R. Besser
Qi Xiang
Matthew S. Buynoski
Qi Xiang
Matthew S. Buynoski
ExaminesHOGANS, DAVID L
Art Unit2813
Technology Center2800
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