Method of reducing leakage using Si3N4 or SiON block dielectric films | Patent Number 06743669

US 06743669 B1
Application Number10164227
Publication Number-
Pendency1 year, 12 months, 2 days
Filled DateJun 5, 2002
Priority DateJun 5, 2002
Publication Date-
Expiration DateJun 5, 2022
Inventor/ApplicantsShiqun Gu
Peter McGrath
Hong Lin
ExaminesBROPHY, JAMIE LYNN
Art Unit2822
Technology Center2800
Assignments
Bellnorthern Research
Current
Hilco Patent Acquisition 55 Llc
Current
Bell Semiconductor Llc
Current
Lsi Logic Corporation
Original
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