Field effect transistor (FET) device having corrugated structure and method for fabrication thereof | Patent Number 07170118

US 07170118 B2
Application Number10632379
Publication NumberUS 20050023569 A1
Pendency3 years, 6 months, 3 days
Filled DateAug 1, 2003
Priority DateAug 1, 2003
Publication DateFeb 3, 2005
Expiration DateAug 1, 2023
Inventor/ApplicantsFu-Liang Yang
ExaminesFARAHANI, DANA
Art Unit2891
Technology Center2800
Assignments
Taiwan Semiconductor Manufacturing Company
Current
Taiwan Semiconductor Manufacturing Company
Original
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