Vertical GaN light emitting diode and method for manufacturing the same | Patent Number 07268372

US 07268372 B2
Application Number10601597
Publication NumberUS 20050173692 A1
Pendency4 years, 2 months, 20 days
Filled DateJun 24, 2003
Priority DateJun 24, 2003
Publication DateAug 11, 2005
Expiration DateJun 24, 2023
Inventor/ApplicantsHun Joo Hahm
Jeong Seok Na
Seung Jin Yoo
Young Ho Park
J ong Seok Na
ExaminesLEWIS, MONICA
Art Unit2822
Technology Center2800
Assignments
Samsung Electronics
Current
Samsung Electronics
Original
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