Trench-gated MOSFET including schottky diode therein | Patent Number 07564097

US 07564097 B2
Application Number11740045
Publication NumberUS 20070194372 A1
Pendency2 years, 2 months, 28 days
Filled DateApr 25, 2007
Priority DateMay 12, 2005
Publication DateAug 23, 2007
Expiration DateJul 21, 2021
Inventor/ApplicantsAkio Nakagawa
Yusuke Kawaguchi
Syotaro Ono
Yoshihiro Yamaguchi
ExaminesDICKEY, THOMAS L
Art Unit2826
Technology Center2800
Assignments
Diodes Incorporated
Current
Toshiba
Original
Law Firm
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