Semiconductor device having 1965 nm gate electrode level region including at least four active linear conductive segments and at least one non-gate linear conductive segment | Patent Number 07948012

US 07948012 B2
Application Number12561224
Publication NumberUS 20100011329 A1
Pendency1 year, 8 months, 10 days
Filled DateSep 16, 2009
Priority DateMar 9, 2006
Publication DateJan 14, 2010
Expiration DateMay 24, 2023
Inventor/ApplicantsMichael C. Smayling
Scott T. Becker
ExaminesHOANG, QUOC DINH
Art Unit2892
Technology Center2800
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