Compensated gate MISFET and method for fabricating the same | Patent Number 08350294

US 08350294 B2
Application Number12756906
Publication NumberUS 20100258848 A1
Pendency2 years, 9 months, 6 days
Filled DateApr 8, 2010
Priority DateApr 8, 2009
Publication DateOct 14, 2010
Expiration DateApr 7, 2029
Inventor/ApplicantsAlexander Lidow
Jianjun Cao
Guang Yuan Zhao
Robert Beach
Alana Nakata
ExaminesQUINTO, KEVIN V
Art Unit2829
Technology Center2800
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