Semiconductor device having an oxide semiconductor layer | Patent Number 08492840

US 08492840 B2
Application Number13008285
Publication NumberUS 20110180796 A1
Pendency2 years, 6 months, 7 days
Filled DateJan 18, 2011
Priority DateJan 18, 2011
Publication DateJul 28, 2011
Expiration DateJan 17, 2031
Inventor/ApplicantsHiromichi GODO
Mayumi Mikami
Shinya Sasagawa
Hiromichi Godo
Hideomi Suzawa
Shunpei YAMAZAKI
Shinya SASAGAWA
Motomu Kurata
Motomu KURATA
Shunpei Yamazaki
Mayumi MIKAMI
Hideomi SUZAWA
ExaminesRAO, SHRINIVAS H
Art Unit2814
Technology Center2800
Assignments
Semiconductor Energy Laboratory
Current
Semiconductor Energy Laboratory
Original
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