Gate with self-aligned ledge for enhancement mode GaN transistors | Patent Number 10312335

US 10312335 B2
Application Number15655438
Publication NumberUS 20170317179 A1
Pendency1 year, 10 months, 19 days
Filled DateJul 20, 2017
Priority DateApr 8, 2009
Publication DateNov 2, 2017
Expiration DateApr 7, 2029
Inventor/ApplicantsAlexander Lidow
Alana Nakata
Jianjun Cao
ExaminesNIESZ, JAMIE C
Art Unit2822
Technology Center2800
Assignments
Efficient Power Conversion Corporation
Current
Efficient Power Conversion Corporation
Original
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