Semiconductor structure having porous semiconductor segment for RF devices and bulk semiconductor region for non-RF devices | Patent Number 11195920

US 11195920 B2
Application Number16598803
Publication NumberUS 20210111249 A1
Pendency2 years, 1 month, 29 days
Filled DateOct 10, 2019
Priority DateOct 9, 2019
Publication DateApr 15, 2021
Expiration DateOct 8, 2039
Inventor/ApplicantsEdward Preisler
Paul D. Hurwitz
David J. Howard
Marco Racanelli
ExaminesWILLIAMS, ALEXANDER O
Art Unit2826
Technology Center2800
Assignments
Newport Fab Llc
Current
Newport Fab Llc
Original
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