High breakdown voltage semiconductor device | Patent Publication Number 20020100935

US 20020100935 A1

Patent NumberUS 06667515 B2

Application Number10053660

Filled DateJan 24, 2002

Priority DateJan 24, 2002

Publication DateAug 1, 2002

Original AssigneeToshiba

Current AssigneeDiodes Incorporated

Inventor/ApplicantsTomoki Inoue
Tomoki Inoue

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