Use of high-K dielectric material in modified ONO structure for semiconductor devices | Patent Application Number 10097912
10097912
Appealed
Inventor/ApplicantsArvind Halliyal
Wei Zhang
Mark W. Randolph
Mark T. Ramsbey
Fred T. K. Cheung
Wei Zhang
Mark W. Randolph
Mark T. Ramsbey
Fred T. K. Cheung
ExaminesBOOTH, RICHARD A
Art Unit2812
Technology Center2800
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