Use of high-K dielectric material in modified ONO structure for semiconductor devices | Patent Number 06642573

US 06642573 B1
Application Number10097912
Publication Number-
Pendency1 year, 7 months, 26 days
Filled DateMar 13, 2002
Priority DateMar 13, 2002
Publication Date-
Expiration DateMar 13, 2022
Inventor/ApplicantsWei Zhang
Mark W. Randolph
Arvind Halliyal
Fred T. K. Cheung
Mark T. Ramsbey
ExaminesBOOTH, RICHARD A
Art Unit2812
Technology Center2800
Assignments
Morgan Stanley Senior Funding Inc.
Current
Advanced Micro Devices Inc
Original
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