Method of forming a metal or metal nitride interface layer between silicon nitride and copper | Patent Application Number 10123588
10123588
Not Appealed
Inventor/ApplicantsMinh Q. Tran
Jeremias D. Romero
Paul R. Besser
Lu You
Pin-Chin Connie Wang
Matthew S. Buynoski
Jeremias D. Romero
Paul R. Besser
Lu You
Pin-Chin Connie Wang
Matthew S. Buynoski
ExaminesLEBENTRITT, MICHAEL
Art Unit2824
Technology Center2800
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