Method of forming a metal or metal nitride interface layer between silicon nitride and copper | Patent Number 06518167
US 06518167 B1Filled DateApr 16, 2002
Priority DateApr 16, 2002
Publication Date-
Expiration DateApr 16, 2022
Inventor/ApplicantsMatthew S. Buynoski
Jeremias D. Romero
Lu You
Minh Q. Tran
Paul R. Besser
Pin-Chin Connie Wang
Jeremias D. Romero
Lu You
Minh Q. Tran
Paul R. Besser
Pin-Chin Connie Wang
ExaminesLEBENTRITT, MICHAEL
Art Unit2824
Technology Center2800
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