Method of forming a contact hole in an interlevel dielectric layer using dual etch stops | Patent Application Number 8905686

8905686
Not Appealed
Patent NumberUS 05912188 NA
Publication Number-
Filled DateAug 4, 1997
Priority DateAug 4, 1997
Inventor/Applicants Daniel Kadosh
Frederick N. Hause
Mark I. Gardner
ExaminesPOWELL, WILLIAM A
Art Unit1765
Technology Center1700
Assignments
Lone Star Silicon Innovations Llc
Current
Advanced Micro Devices Inc
Original
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