Method of forming a contact hole in an interlevel dielectric layer using dual etch stops | Patent Number 05912188

US 05912188 NA
Application Number8905686
Publication Number-
Pendency1 year, 10 months, 15 days
Filled DateAug 4, 1997
Priority DateAug 4, 1997
Publication Date-
Expiration DateAug 4, 2017
Inventor/Applicants Frederick N. Hause
Mark I. Gardner
Daniel Kadosh
ExaminesPOWELL, WILLIAM A
Art Unit1765
Technology Center1700
Assignments
Lone Star Silicon Innovations Llc
Current
Advanced Micro Devices Inc
Original
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