Method for manufacturing gallium nitride compound semiconductor and light emitting element | Patent Number 06861270

US 06861270 B2
Application Number10092231
Publication NumberUS 20030094618 A1
Pendency2 years, 12 months, 1 day
Filled DateMar 6, 2002
Priority DateMar 6, 2002
Publication DateMay 22, 2003
Expiration DateMar 6, 2022
Inventor/ApplicantsShiro Sakai
Shiro Sakai
ExaminesNGUYEN, JOSEPH H
Art Unit2815
Technology Center2800
Assignments
Nitride Semiconductors Co. Ltd.
Current
Nitride Semiconductors Co. Ltd.
Original
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