Double-gate FinFET device and fabricating method thereof | Patent Number 06885055

US 06885055 B2
Application Number10358981
Publication NumberUS 20040150029 A1
Pendency2 years, 2 months, 22 days
Filled DateFeb 4, 2003
Priority DateFeb 4, 2003
Publication DateAug 5, 2004
Expiration DateFeb 4, 2023
Inventor/ApplicantsJong-Ho Lee
Jong-Ho Lee
ExaminesLOKE, STEVEN HO YIN
Art Unit2818
Technology Center2800
Assignments
Kipb Llc
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