Double-gate FinFET device and fabricating method thereof | Patent Publication Number 20040150029

US 20040150029 A1

Patent NumberUS 06885055 B2

Application Number10358981

Filled DateFeb 4, 2003

Priority DateFeb 4, 2003

Publication DateAug 5, 2004

Original Assignee

Current AssigneeKipb Llc

Inventor/ApplicantsJong-Ho Lee
Jong-Ho Lee

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