Semiconductor formation method that utilizes multiple etch stop layers | Patent Number 07572727
US 07572727 B1Filled DateSep 2, 2004
Priority DateSep 2, 2004
Publication Date-
Expiration DateSep 2, 2024
Inventor/ApplicantsKouros Ghandehari
Dawn Hopper
Angela T. Hui
Wenmei Li
Dawn Hopper
Angela T. Hui
Wenmei Li
ExaminesSMOOT, STEPHEN W
Art Unit2813
Technology Center2800
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