Integrated circuit including cross-coupled transistors with two transistors of different type having gate electrodes formed by common gate level feature with shared diffusion regions on opposite sides of common gate level feature | Patent Number 08264049
US 08264049 B2Filled DateApr 2, 2010
Priority DateMar 13, 2008
Publication DateOct 7, 2010
Expiration DateMar 12, 2028
Inventor/ApplicantsScott T. Becker
ExaminesKUO, WENSING W
Art Unit2826
Technology Center2800
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