Integrated circuit including cross-coupled transistors with two transistors of different type having gate electrodes formed by common gate level feature with shared diffusion regions on opposite sides of common gate level feature | Patent Publication Number 20100252891
US 20100252891 A1Patent NumberUS 08264049 B2
Application Number12753766
Filled DateApr 2, 2010
Priority DateMar 13, 2008
Publication DateOct 7, 2010
Original AssigneeEmerald Innovations
Rpx Corporation
Rpx Corporation
Current AssigneeAvidbank Corporate Finance
Inventor/ApplicantsScott T. Becker
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