Semiconductor structure having through-substrate via (TSV) in porous semiconductor region | Patent Number 11145572

US 11145572 B2
Application Number16703367
Publication NumberUS 20210111101 A1
Pendency1 year, 10 months, 13 days
Filled DateDec 4, 2019
Priority DateOct 9, 2019
Publication DateApr 15, 2021
Expiration DateOct 8, 2039
Inventor/ApplicantsDavid J. Howard
ExaminesWILLIAMS, ALEXANDER O
Art Unit2826
Technology Center2800
Assignments
Newport Fab Llc
Current
Newport Fab Llc
Original
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