Semiconductor device and method for high-k gate dielectrics | Patent Publication Number 20060131675

US 20060131675 A1

Patent NumberUS 07355235 B2

Application Number11020377

Filled DateDec 22, 2004

Priority DateDec 22, 2004

Publication DateJun 22, 2006

Original AssigneeTaiwan Semiconductor Manufacturing Company

Current AssigneeTaiwan Semiconductor Manufacturing Company

Inventor/ApplicantsChing-Wei Tsai
Chih-Hao Wang
Shang-Chih Chen

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