Hybrid gap-fill approach for STI formation | Patent Publication Number 20090209083

US 20090209083 A1
Patent NumberUS 08187948 B2
Application Number12032962
Filled DateFeb 18, 2008
Priority DateFeb 18, 2008
Publication DateAug 20, 2009
Original AssigneeTaiwan Semiconductor Manufacturing Company
Current AssigneeTaiwan Semiconductor Manufacturing Company
Inventor/ApplicantsCheng-Yuan Tsai
Neng-Kuo Chen
Kuo-Hwa Tzeng
Chih-Hsiang Chang
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